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this is information on a product in full production. october 2013 docid15406 rev 4 1/19 stb27nm60nd, STW27NM60ND automotive-grade n-channel 600 v, 0.13 , 21 a fdmesh? ii power mosfets (with fast diode) in d 2 pak and to-247 packages datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? the worldwide best r ds(on) *area amongst the fast recovery diode devices ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? extremely high dv/dt and avalanche capabilities applications ? switching applications description these fdmesh? ii power mosfets with intrinsic fast-recovery body diode are produced using the second generation of mdmesh? technology. utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. they are ideal for bridge topologies and zvs phase-shift converters. 1 3 tab d 2 pak to-247 1 2 3 !-v $4!" ' 3 order codes v ds @ t jmax r ds(on) max i d stb27nm60nd 650 v 0.16 21 a STW27NM60ND table 1. device summary order codes marking packages packaging stb27nm60nd 27nm60nd d2pak tape and reel STW27NM60ND 27nm60nd to-247 tube www.st.com
contents stb27nm60nd, STW27NM60ND 2/19 docid15406 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
docid15406 rev 4 3/19 stb27nm60nd, STW27NM60ND electrical ratings 19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 21 a i d drain current (continuous) at t c = 100 c 13 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 84 a p tot total dissipation at t c = 25 c 160 w dv/dt (2) 2. i sd 21 a, di/dt 600 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 40 v/ns t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter d2pak to-247 unit r thj-case thermal resistance junction-case max 0.78 c/w r thj-amb thermal resistance junction-ambient max 50 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-ambient max 30 c/w table 4. avalanche characteristics symbol parameter max value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 10 a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) 850 mj
electrical characteristics stb27nm60nd, STW27NM60ND 4/19 docid15406 rev 4 2 electrical characteristics (t case =25 c unless otherwise specified). table 5. on/off states symbol parameter test conditions value unit min. typ. max. v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v dv/dt (1) 1. characteristic value at turn off on inductive load. drain source voltage slope v dd = 480 v, i d = 21 a, v gs = 10 v 48 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = 600 v 1 a v ds = 600 v @t c = 125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 10.5 a 0.13 0.16 table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 10.5 a - 17 - s c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 2400 - pf c oss output capacitance - 150 - pf c rss reverse transfer capacitance -15-pf c oss eq. (2) equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 320 - pf t d(on) turn-on delay time v dd = 300 v, i d = 10.5 a r g =4.7 v gs = 10 v (see figure 21) , (see figure 16) -60-ns t r rise time - 30 - ns t d(off) turn-off delay time - 50 - ns t f fall time - 40 - ns
docid15406 rev 4 5/19 stb27nm60nd, STW27NM60ND electrical characteristics 19 q g total gate charge v dd = 480 v, i d = 21 a, v gs = 10 v, (see figure 17) -80-nc q gs gate-source charge - 15 - nc q gd gate-drain charge - 40 - nc r g gate input resistance f = 1 mhz, gate dc bias = 0, test signal level = 20 mv, i d = 0 -1.6- 1. pulsed: pulse duration=300s, duty cycle 1.5% 2. c oss eq . is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss table 6. dynamic (continued) symbol parameter test conditions min. typ. max. unit
electrical characteristics stb27nm60nd, STW27NM60ND 6/19 docid15406 rev 4 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 21 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 84 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 21 a, v gs = 0 - 1.3 v t rr reverse recovery time i sd = 21 a, v dd = 60 v di/dt=100 a/s (see figure 18) - 160 ns q rr reverse recovery charge - 1 c i rrm reverse recovery current - 15 a t rr reverse recovery time i sd = 21 a,v dd = 60 v di/dt=100 a/s, t j = 150 c (see figure 18) - 230 ns q rr reverse recovery charge - 2 c i rrm reverse recovery current - 19 a
docid15406 rev 4 7/19 stb27nm60nd, STW27NM60ND electrical characteristics 19 2.1 electrical characteristics (curves) figure 2. safe operating area for d2pak figure 3. thermal impedance for d2pak figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 figure 6. output characteristics figure 7. transfer characteristics
electrical characteristics stb27nm60nd, STW27NM60ND 8/19 docid15406 rev 4 figure 8. transconductance figure 9. static drain-source on-resistance figure 10. gate charge vs gate-source voltage figure 11. capacitance variations figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature
docid15406 rev 4 9/19 stb27nm60nd, STW27NM60ND electrical characteristics 19 figure 14. source-drain diode forward characteristics figure 15. normalized v (br)dss vs temperature
test circuits stb27nm60nd, STW27NM60ND 10/19 docid15406 rev 4 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
docid15406 rev 4 11/19 stb27nm60nd, STW27NM60ND package mechanical data 19 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data stb27nm60nd, STW27NM60ND 12/19 docid15406 rev 4 table 8. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
docid15406 rev 4 13/19 stb27nm60nd, STW27NM60ND package mechanical data 19 figure 22. d2pak (to-263) drawing figure 23. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
package mechanical data stb27nm60nd, STW27NM60ND 14/19 docid15406 rev 4 table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid15406 rev 4 15/19 stb27nm60nd, STW27NM60ND package mechanical data 19 figure 24. to-247 drawing 0075 3 25_g
packing mechanical data stb27nm60nd, STW27NM60ND 16/19 docid15406 rev 4 5 packing mechanical data table 10. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
docid15406 rev 4 17/19 stb27nm60nd, STW27NM60ND packing mechanical data 19 figure 25. tape figure 26. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history stb27nm60nd, STW27NM60ND 18/19 docid15406 rev 4 6 revision history table 11. document revision history date revision changes 02-mar-2009 1 first release. 08-mar-2011 2 document status promoted from preliminary data to datasheet. 28-nov-2011 3 inserted new device in d 2 pak. updated table 1: device summary , table 3: thermal data , section 3: test circuits and section 4: package mechanical data inserted section 5: packing mechanical data . ? minor text changes. 31-oct-2013 4 ? updated: title and features in cover page ? updated: section 4: package mechanical data and section 5: packing mechanical data ? minor text changes
docid15406 rev 4 19/19 stb27nm60nd, STW27NM60ND 19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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